Thermally stimulated luminescence of SrS:Cu thin films

Morton, D. C.; Forsythe, E. W.; Sun, S.-S.; Wood, M. C.; Ervin, M. H.; Kirchner, K.
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1400
Academic Journal
SrS:Cu thin films were evaluated using thermally stimulated luminescence (TSL), photoluminescence (PL), electroluminescence (EL), and charge transfer over a temperature range of 10-850 K. The trap states were measured with and without a BaTa[sub 2]O[sub 6] (BTO) overlayer film. From TSL results, the trap state energies were measured in the range of 0.4 eV, with differences due the BTO overlayer. From the PL, EL, and charge transfer measurements, the light emission and charge transfer decrease at a temperature consistent with the 0.4 eV trap level, demonstrating the importance of the trap states to EL devices. © 2001 American Institute of Physics.


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