Molecular-beam epitaxy of conductive CdF[sub 2] films on Si substrates by simultaneous Cd exposure

Kobori, Toshimitsu; Tsutsui, Kazuo
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1406
Academic Journal
Conductive CdF[sub 2] films were grown on CaF[sub 2]/Si(111) substrates by molecular-beam epitaxy with simultaneous exposure to a pure Cd beam and a GdF[sub 3] dopant beam during CdF[sub 2] growth. CdF[sub 2] films grown at 200 °C using this method exhibited low resistivities without postannealing. CdF[sub 2] films doped with 10[sup 18]-10[sup 19] cm[sup -3] Gd at a Cd vapor pressure of 10[sup -8]-10[sup -7] Torr exhibited low sheet resistances corresponding to a resistivity of about 0.1 Ω cm at room temperature. The temperature dependence of sheet resistance is indicative of impurity banding properties similar to those reported for bulk CdF[sub 2] crystals. This method has potential applications in the epitaxial growth of fluoride heterostructures with conductive CdF[sub 2] layers, particularly on Si substrates. © 2001 American Institute of Physics.


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