Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Palmer, M. J.; Braithwaite, G.; Grasby, T. J.; Phillips, P. J.; Prest, M. J.; Parker, E. H. C.; Whall, T. E.; Parry, C. P.; Waite, A. M.; Evans, A. G. R.; Roy, S.; Watling, J. R.; Kaya, S.; Asenov, A.
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1424
Academic Journal
The room-temperature effective mobilities of pseudomorphic Si/Si[sub 0.64]Ge[sub 0.36]/Si p-metal-oxidesemiconductor field effect transistors are reported. The peak mobility in the buried SiGe channel increases with silicon cap thickness. It is argued that SiO[sub 2]/Si interface roughness is a major source of scattering in these devices, which is attenuated for thicker silicon caps. It is also suggested that segregated Ge in the silicon cap interferes with the oxidation process, leading to increased SiO[sub 2]/Si interface roughness in the case of thin silicon caps. © 2001 American Institute of Physics.


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