TITLE

Vortex channeling and the voltage-current characteristics of YBa[sub 2]Cu[sub 3]O[sub 7] low-angle grain boundaries

AUTHOR(S)
Hogg, M. J.; Kahlmann, F.; Tarte, E. J.; Barber, Z. H.; Evetts, J. E.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1433
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have performed (voltage-current) V-I measurements on a thin film YBa[sub 2]Cu[sub 3]O[sub 7] 4° [001] tilt low-angle grain boundary over an extensive range of temperatures and fields, verifying the presence of a linear characteristic. We report on the occurrence of the linear characteristic in its basic form and on the observation of V-I kinking into several, and in some cases numerous, linear segments. We interpret these findings in terms of a variation in the dissipative width at the grain boundary. Kinking from one linear V-I section to another of different gradient is described in terms of a change in the number of vortex rows being viscously channeled along the boundary. © 2001 American Institute of Physics.
ACCESSION #
4710345

 

Related Articles

  • Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate. Horita, Susumu; Nakata, Y.; Shimoyama, A. // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2250 

    We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam....

  • Microwave power handling in engineered YBa[sub 2]Cu[sub 3]O[sub 7-δ] grain boundaries. Habib, Y. M.; Oates, D. E.; Dresselhaus, G.; Dresselhaus, M. S.; Vale, L. R.; Ono, R. H. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    Microwave-frequency (rf) power-dependence measurements performed on thin-film YBa[sub 2]Cu[sub 3]O[sub 7-δ] grain boundaries engineered on sapphire bicrystal substrates with misorientation angles of θ=2°, 5°, 10°, and 24° are presented. The data are compared to measurements on...

  • Modeling of the evolution of dielectric loss with processing temperature in ferroelectric and dielectric thin oxide films. Zhu, X. H.; Guigues, B.; Defaÿ, E.; Aïd, M. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p074118 

    It was experimentally found that the evolution of dielectric loss with processing temperature displays a common trend in ferroelectric and dielectric thin oxide films; first an increase and then a decrease in dielectric loss when the processing temperature is gradually raised. Such a dielectric...

  • The anisotropic magnetoresistance in epitaxial thin films and polycrystalline samples of La0.65Ca0.35MnO3. Egilmez, M.; Ma, Rongchao; Chow, K. H.; Jung, J. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p07D706 

    We report measurements of the anisotropic magnetoresistance (AMR) of epitaxial thin film and polycrystalline samples of La0.65Ca0.35MnO3. Near the metal-insulator transition (MIT) temperature the AMR of both polycrystalline and thin film samples exhibit a peak. However at temperatures well below...

  • Clean grain boundaries and weak links in high Tc superconducting YBa2Cu3O7-x thin films. Shin, D. H.; Silcox, J.; Russek, S. E.; Lathrop, D. K.; Moeckly, B.; Buhrman, R. A. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p508 

    It is demonstrated that polycrystalline thin films of high Tc superconducting YBa2Cu3O7-x can be grown with clean grain boundaries, i.e., without a boundary layer of segregation or different phase. In clean stoichiometric samples, angular misorientations of grains may be the origin of weak link...

  • Superconducting and normal-state properties of YBa[sub 2]Cu[sub 3]O[sub 7-δ] -bicrystal grain boundary junctions in thin films. Hilgenkamp, H.; Mannhart, J. // Applied Physics Letters;7/13/1998, Vol. 73 Issue 2 

    A model, based on universal properties of high-T[sub c] superconductors only, is presented for the transport characteristics of grain boundaries in these materials. The model accounts for the superconducting as well as for the normal-state transport properties observed in a comprehensive study...

  • Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target. Allenic, A.; Guo, W.; Chen, Y. B.; Zhao, G. Y.; Pan, X. Q.; Che, Y.; Hu, Z. D.; Liu, B. // Journal of Materials Research;Aug2007, Vol. 22 Issue 8, p35 

    Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by...

  • Low-temperature ordering of (001) granular FePt films by inserting ultrathin SiO2 layers. Wu, Yun-Chung; Wang, Liang-Wei; Lai, Chih-Huang // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p072502 

    L10 granular FePt–SiO2 films with a (001) preferred orientation and well-separated grains of 5.14 nm were obtained by depositing atomic-scale Fe/Pt/SiO2 multilayers (MLs) on glass substrates and subsequently annealing MLs at a temperature of 350 °C. Large out-of-plane coercivity of...

  • Microstructures and impedance studies of Bi3.15Nd0.85Ti3O12 thin films. Di Wu; Aidong Li // Applied Physics A: Materials Science & Processing;May2009, Vol. 95 Issue 2, p517 

    Microstructures and impedance characteristics of chemical-solution-derived Bi3.15Nd0.85Ti3O12 thin films were studied as functions of temperature. A dielectric anomaly was found at around 450°C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies,...

  • Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn/SiO2 interface. Koike, J.; Haneda, M.; Iijima, J.; Otsuka, Y.; Sako, H.; Neishi, K. // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p043527 

    A thin diffusion barrier was self-formed by annealing at an interface between a Cu-Mn alloy film and a SiO2 substrate. The growth of the barrier layer followed a logarithmic rate law, which represents field-enhanced growth mechanism in the early stage and self-limiting growth behavior in the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics