Vortex channeling and the voltage-current characteristics of YBa[sub 2]Cu[sub 3]O[sub 7] low-angle grain boundaries

Hogg, M. J.; Kahlmann, F.; Tarte, E. J.; Barber, Z. H.; Evetts, J. E.
March 2001
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1433
Academic Journal
We have performed (voltage-current) V-I measurements on a thin film YBa[sub 2]Cu[sub 3]O[sub 7] 4° [001] tilt low-angle grain boundary over an extensive range of temperatures and fields, verifying the presence of a linear characteristic. We report on the occurrence of the linear characteristic in its basic form and on the observation of V-I kinking into several, and in some cases numerous, linear segments. We interpret these findings in terms of a variation in the dissipative width at the grain boundary. Kinking from one linear V-I section to another of different gradient is described in terms of a change in the number of vortex rows being viscously channeled along the boundary. © 2001 American Institute of Physics.


Related Articles

  • Alignment of grain boundary in a Si film crystallized by a linearly polarized laser beam on a glass substrate. Horita, Susumu; Nakata, Y.; Shimoyama, A. // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2250 

    We performed crystallization of an amorphous Si film deposited on a Pyrex glass substrate using a Nd:YAG pulse-laser beam with linear polarization. It was found that, in the crystallized film, the grain boundaries were aligned with a period of about 550 nm or the wavelength of the laser beam....

  • Microwave power handling in engineered YBa[sub 2]Cu[sub 3]O[sub 7-δ] grain boundaries. Habib, Y. M.; Oates, D. E.; Dresselhaus, G.; Dresselhaus, M. S.; Vale, L. R.; Ono, R. H. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    Microwave-frequency (rf) power-dependence measurements performed on thin-film YBa[sub 2]Cu[sub 3]O[sub 7-δ] grain boundaries engineered on sapphire bicrystal substrates with misorientation angles of θ=2°, 5°, 10°, and 24° are presented. The data are compared to measurements on...

  • Modeling of the evolution of dielectric loss with processing temperature in ferroelectric and dielectric thin oxide films. Zhu, X. H.; Guigues, B.; Defaÿ, E.; Aïd, M. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p074118 

    It was experimentally found that the evolution of dielectric loss with processing temperature displays a common trend in ferroelectric and dielectric thin oxide films; first an increase and then a decrease in dielectric loss when the processing temperature is gradually raised. Such a dielectric...

  • The anisotropic magnetoresistance in epitaxial thin films and polycrystalline samples of La0.65Ca0.35MnO3. Egilmez, M.; Ma, Rongchao; Chow, K. H.; Jung, J. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p07D706 

    We report measurements of the anisotropic magnetoresistance (AMR) of epitaxial thin film and polycrystalline samples of La0.65Ca0.35MnO3. Near the metal-insulator transition (MIT) temperature the AMR of both polycrystalline and thin film samples exhibit a peak. However at temperatures well below...

  • Clean grain boundaries and weak links in high Tc superconducting YBa2Cu3O7-x thin films. Shin, D. H.; Silcox, J.; Russek, S. E.; Lathrop, D. K.; Moeckly, B.; Buhrman, R. A. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p508 

    It is demonstrated that polycrystalline thin films of high Tc superconducting YBa2Cu3O7-x can be grown with clean grain boundaries, i.e., without a boundary layer of segregation or different phase. In clean stoichiometric samples, angular misorientations of grains may be the origin of weak link...

  • Superconducting and normal-state properties of YBa[sub 2]Cu[sub 3]O[sub 7-δ] -bicrystal grain boundary junctions in thin films. Hilgenkamp, H.; Mannhart, J. // Applied Physics Letters;7/13/1998, Vol. 73 Issue 2 

    A model, based on universal properties of high-T[sub c] superconductors only, is presented for the transport characteristics of grain boundaries in these materials. The model accounts for the superconducting as well as for the normal-state transport properties observed in a comprehensive study...

  • Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target. Allenic, A.; Guo, W.; Chen, Y. B.; Zhao, G. Y.; Pan, X. Q.; Che, Y.; Hu, Z. D.; Liu, B. // Journal of Materials Research;Aug2007, Vol. 22 Issue 8, p35 

    Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by...

  • Low-temperature ordering of (001) granular FePt films by inserting ultrathin SiO2 layers. Wu, Yun-Chung; Wang, Liang-Wei; Lai, Chih-Huang // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p072502 

    L10 granular FePt–SiO2 films with a (001) preferred orientation and well-separated grains of 5.14 nm were obtained by depositing atomic-scale Fe/Pt/SiO2 multilayers (MLs) on glass substrates and subsequently annealing MLs at a temperature of 350 °C. Large out-of-plane coercivity of...

  • Microstructures and impedance studies of Bi3.15Nd0.85Ti3O12 thin films. Di Wu; Aidong Li // Applied Physics A: Materials Science & Processing;May2009, Vol. 95 Issue 2, p517 

    Microstructures and impedance characteristics of chemical-solution-derived Bi3.15Nd0.85Ti3O12 thin films were studied as functions of temperature. A dielectric anomaly was found at around 450°C, corresponding to the paraelectric to ferroelectric transition. Via complex impedance studies,...

  • Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn/SiO2 interface. Koike, J.; Haneda, M.; Iijima, J.; Otsuka, Y.; Sako, H.; Neishi, K. // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p043527 

    A thin diffusion barrier was self-formed by annealing at an interface between a Cu-Mn alloy film and a SiO2 substrate. The growth of the barrier layer followed a logarithmic rate law, which represents field-enhanced growth mechanism in the early stage and self-limiting growth behavior in the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics