TITLE

Comment on "Do P[sub b1] centers have levels in the Si band gap? Spin-dependent recombination study of the P[sub b1] 'hyperfine spectrum' " [Appl. Phys. Lett. 76, 3771 (2000)]

AUTHOR(S)
Stesmans, A.; Afanas'ev, V. V.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1451
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comments on T. Mishima and colleagues'spin-dependent recombination study of silicon (Si)/SiC [sub 2] n-channel metal-oxide-silicon field-effect transistors configured as gate controlled diode, published in the 2001 issue of the 'Applied Physics Letters.' Controversy on the evidence for the presence of low-field Si Phosphorus [sub b1] hyperfine peak; Failure to cite the experimental approach and the way results are inferred.
ACCESSION #
4710338

 

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