TITLE

# Response to "Comment on 'Do P[sub b1] centers have levels in the Si band gap? Spin-dependent recombination study of the P[sub b1] "hyperfine spectrum" ' " [Appl. Phys. Lett. 78, 1451 (2001)]

AUTHOR(S)
Mishima, Tetsuya D.; Lenahan, Patrick M.; Weber, Werner
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1453
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
Responds to a commentary made by A. Stesmans and V.V. Afanas'ev concerning the spin-dependent recombination (SDR) study of the Phosphorus [sub b1] hyperfine spectrum, published in the 2001 issue of the 'Applied Physics of Letters.' Identification of the P [sub b1] hyperfine peaks; Indication of P [sub b1] signal in the intense central line in the SDR trace of the silicon center peak.
ACCESSION #
4710337

## Related Articles

• Comment on "Do P[sub b1] centers have levels in the Si band gap? Spin-dependent recombination study of the P[sub b1] 'hyperfine spectrum' " [Appl. Phys. Lett. 76, 3771 (2000)]. Stesmans, A.; Afanas'ev, V. V. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1451

Comments on T. Mishima and colleagues'spin-dependent recombination study of silicon (Si)/SiC [sub 2] n-channel metal-oxide-silicon field-effect transistors configured as gate controlled diode, published in the 2001 issue of the 'Applied Physics Letters.' Controversy on the evidence for the...

• The microwave spectrum of the PCl radical in the X 3Î£- state. Minowa, Tatsuya; Saito, Shuji; Hirota, Eizi // Journal of Chemical Physics;11/15/1985, Vol. 83 Issue 10, p4939

The microwave spectrum of the P35Cl radical in the ground state has been observed by using a source modulation microwave spectrometer. The PCl radical was produced in a 3.5 m long free space cell by a dc glow discharge in the PCl3 gas. The seven rotational transitions of N=5â†4 up to...

• First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride. Lenahan, P. M.; Curry, Sean E. // Applied Physics Letters;1/8/1990, Vol. 56 Issue 2, p157

We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon â€˜â€˜dangling bondâ€™â€™ defect. Our results...

• Hyperfine structure of the SiC radical. Mollaaghababa, R.; Gottlieb, C. A.; Thaddeus, P. // Journal of Chemical Physics;1/15/1993, Vol. 98 Issue 2, p968

The millimeter-wave rotational spectrum of the free 29SiC radical in the X3Î  ground state, produced in a low-pressure glow discharge through SiH4 and CO, was detected with the same reactive-molecule spectrometer used earlier to detect SiC and Si13C. Eleven rotational transitions, all but two...

• Phosphorus hyperfine structure in the electronic spectrum of the HPCl free radical. Tackett, Brandon S.; Clouthier, Dennis J.; Adam, Allan G.; Shepard, Scott A. // Journal of Chemical Physics;7/15/2004, Vol. 121 Issue 3, p1405

The 444 nm 201 bands of the Ãƒ 2Aâ€²â€“X 2Aâ€³ transition of the jet-cooled HP 35Cl and HP 37Cl radicals have been studied at high resolution using the pulsed electric discharge technique with a precursor mixture of PCl3 and H2. Spectra recorded with linewidths of âˆ¼360 MHz...

• Microwave spectroscopy of the PBr radical in the X 3Î£- state. Okabayashi, Toshiaki; Kawajiri, Hideaki; Umeyama, Michiaki; Ide, Chihiro; Oe, Sumio; Tanimoto, Mitsutoshi // Journal of Chemical Physics;9/28/2008, Vol. 129 Issue 12, p124301

The microwave spectrum of the PBr radical in the X 3Î£- ground electronic state has been observed by a source modulated spectrometer. The PBr radical was generated in a free space cell by an ac/dc glow discharge in a mixture of PBr3 with He and/or H2. A spectrum with three spin components for...

• 29Si attribution of the 1.3 mT hyperfine structure of the Eâ€²Î³ centers in amorphous SiO2. Vaccaro, G.; Agnello, S.; Buscarino, G.; Nuccio, L.; Grandi, S.; Mustarelli, P. // Journal of Applied Physics;May2009, Vol. 105 Issue 9, p093514

We report an experimental investigation by electron paramagnetic resonance of the doublet of lines split by âˆ¼1.3 mT and centered on the Eâ€²Î³ center resonance line in the spectrum of irradiated amorphous SiO2. Commercial and sol-gel materials, some of which subjected to...

• Peculiarities of neutron-transmutation phosphorous doping of 30Si enriched SiC crystals: Electron paramagnetic resonance study. Baranov, P. G.; Ber, B. Ya.; Ilyin, I. V.; Ionov, A. N.; Mokhov, E. N.; Muzafarova, M. V.; Kaliteevskii, M. A.; Kop’ev, P. S.; Kaliteevskii, A. K.; Godisov, O. N.; Lazebnik, I. M. // Journal of Applied Physics;Sep2007, Vol. 102 Issue 6, p063713

We have obtained a high concentration of P donor dopants in 6H-SiC enriched with 30Si and irradiated with thermal neutrons. It was established that annealing at a relatively low temperature of 1300 Â°C, i.e., 500â€“600 Â°C lower than that used for annealing SiC with the natural isotope...

• Structural properties of the range-II- and range-III order in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy. Vaccaro, G.; Buscarino, G.; Agnello, S.; Messina, G.; Carpanese, M.; Gelardi, F. M. // European Physical Journal B -- Condensed Matter;Jul2010, Vol. 76 Issue 2, p197

In the present work we report an experimental investigation by electron paramagnetic resonance spectroscopy on the hyperfine structure of the E' $_\gamma$ point defect, probing the local arrangement of the network (range-II order), and by Raman spectroscopy on the D1 and D2 lines, probing mean...

Share