Strong luminescence from Tamm states in modulation-doped superlattices

Henriques, A. B.
February 2001
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p691
Academic Journal
Calculations are presented for the photoluminescence spectrum of InP/In[sub 0.53]Ga[sub 0.47]As superlattices doped with Si. When doping is confined to the inner barriers, the photoluminescence is dominated by transitions between Tamm states in the electron and valence bands, which contribute with an optical band at energies higher than the In[sub 0.53]Ga[sub 0.47]As band gap. These results are in good agreement with experimental observations. © 2001 American Institute of Physics.


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