Molecular-beam epitaxial growth and surface characterization of GaAs(311)B

Wang, Z. M.; Da¨weritz, L.; Ploog, K. H.
February 2001
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p712
Academic Journal
Reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) are used to study the surface and growth of GaAs (311)B. The RHEED pattern reveals a lateral periodicity of 3.2 nm along the [011¯] direction, which is confirmed in real space by STM images. Pronounced RHEED intensity oscillations during the homoepitaxial growth on GaAs(311)B were observed in a wide substrate temperature range. © 2001 American Institute of Physics.


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