Fast through-bond diffusion of nitrogen in silicon

Schultz, Peter A.; Nelson, Jeffrey S.
February 2001
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p736
Academic Journal
We report first-principles total energy calculations of interaction of nitrogen in silicon with silicon self-interstitials. Substitutional nitrogen captures a silicon interstitial with 3.5 eV binding energy forming a <100> split interstitial ground-state geometry, with the nitrogen forming three bonds. The low-energy migration path is through a bond bridge state having two bonds. Fast diffusion of nitrogen occurs through a pure interstitialcy mechanism: the nitrogen never has less than two bonds. Near-zero formation energy of the nitrogen interstitialcy with respect to the substitutional rationalizes the low solubility of substitutional nitrogen in silicon. © 2001 American Institute of Physics.


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