Sharp band edge photoluminescence of high-purity CuInS[sub 2] single crystals

Yoshino, Kenji; Ikari, Tetsuo; Shirakata, Sho; Miyake, Hideto; Hiramatsu, Kazumasa
February 2001
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p742
Academic Journal
Temperature-dependent photoluminescence measurements were carried out between 8 and 300 K on CuInS[sub 2] single crystals grown by a traveling heater method. Ten distinct peaks were present in the near-band edge region. Four unknown peaks, observed at 8 K, were found to be due to bound exciton emission. Moreover, the luminescence remained stable up to room temperature. © 2001 American Institute of Physics.


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