TITLE

Properties of carbon-doped GaN

AUTHOR(S)
Tang, H.; Webb, J. B.; Bardwell, J. A.; Raymond, S.; Salzman, Joseph; Uzan-Saguy, C.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p757
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The properties of carbon-doped GaN epilayers grown by molecular-beam epitaxy have been studied by temperature-dependent resistivity, Hall-effect measurements, x-ray diffraction, and by photoluminescence spectroscopy. Carbon doping was found to render the GaN layers highly resistive (>10[sup 8] Ω cm) and quench the band edge excitonic emissions. Yellow luminescence is still present in carbon-doped GaN layers. The highly resistive state is interpreted as being caused by direct compensation by the carbon acceptors and by the consequently enhanced potential barrier at the subgrain boundaries. Evidence of dislocations joining to form potential barriers along the subgrain boundaries was observed in photoassisted wet etching experiments on electrically conducting GaN layers. GaN films grown on insulating carbon-doped base layers are of excellent transport and optical properties. © 2001 American Institute of Physics.
ACCESSION #
4710309

 

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