TITLE

Infrared optical properties of LaNiO[sub 3]-platinized silicon and PbZr[sub χ]Ti[sub 1-χ]O[sub 3]-LaNiO[sub 3]-platinized silicon heterostructures

AUTHOR(S)
Yu, J.; Huang, Z. M.; Meng, X. J.; Sun, J. L.; Chu, J. H.; Tang, D. Y.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p793
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using infrared spectroscopic ellipsometry, the optical constants of LaNiO[sub 3] thin films on Pt(111)-Ti-SiO[sub 2]-Si substrates are obtained in the 2.5-12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650 °C. At the same time, the infrared optical properties of PbZr[sub χ]Ti[sub 1-χ]O[sub 3](PZT) thin films with χ=0.3 and 0.5 on LaNiO[sub 3]-Pt-Ti-SiO[sub 2]-Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni-PZT-LaNiO[sub 3]-Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors. © 2001 American Institute of Physics.
ACCESSION #
4710295

 

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