Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

Rivas, Cristian; Lake, Roger; Klimeck, Gerhard; Frensley, William R.; Fischetti, Massimo V.; Thompson, Phillip E.; Rommel, Sean L.; Berger, Paul R.
February 2001
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p814
Academic Journal
Full-band simulations of indirect, phonon assisted, interband tunneling are used to calculate the current-voltage response of a low-temperature molecular-beam-epitaxy-grown silicon tunnel diode with delta-doped contacts. Electron confinement in the contacts results in weak structure in the current-voltage characteristic. The structure is lost when finite lifetime effects are included. The approach uses the nonequilibrium Green function formalism in a second-neighbor sp3s[sup *] planar orbital basis. © 2001 American Institute of Physics.


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