Quantitative metrology study of Cu/SiO[sub 2] interconnect structures using fluorescence x-ray microscopy

Xu, Guangyong; Su, X.; Stagarescu, C. B.; Eastman, D. E.; Lai, B.; Cai, Z.; Noyan, I. C.; Hu, C.-K.
February 2001
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p820
Academic Journal
We demonstrate the capability of fluorescence x-ray microscopy with a 0.25 μm beam for in situ measurements of Cu-wiring interconnects of submicron dimensions. We are able to measure submicron line widths, lengths, and thicknesses of both Cu and W structures, and a Ta liner in the test vehicle, to the absolute accuracy of 0.03 μm, and a relative accuracy of ∼4% in lateral dimensions, and ∼10% in heights. The shape of a buried electromigration void was also determined. This nanoscale nondestructive characterization technique promises to be powerful for a variety of materials systems. © 2001 American Institute of Physics.


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