Lateral Al[sub x]Ga[sub 1-x]N power rectifiers with 9.7 kV reverse breakdown voltage

Zhang, A. P.; Johnson, J. W.; Ren, F.; Han, J.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Redwing, J. M.; Lee, K. P.; Pearton, S. J.
February 2001
Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p823
Academic Journal
Al[sub x]Ga[sub 1-x]N (x=0-0.25) Schottky rectifiers were fabricated in a lateral geometry employing p[sup +]-implanted guard rings and rectifying contact overlap onto an SiO[sub 2] passivation layer. The reverse breakdown voltage (V[sub B]) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al[sub 0.25]Ga[sub 0.75]N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67x10[sup 5] V cm[sup -1], which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (V[sub B])[sup 2]/R[sub ON], where R[sub ON] is the on-state resistance, was in the range 94-268 MW cm-2 for all the devices. © 2001 American Institute of Physics.


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