72 W Nd:Y[sub 3]Al[sub 5]O[sub 12] ceramic laser

Lu, Jianren; Murai, T.; Takaichi, K.; Uematsu, T.; Misawa, K.; Prabhu, M.; Xu, J.; Ueda, K.; Yagi, H.; Yanagitani, T.; Kaminskii, A. A.; Kudryashov, A.
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3586
Academic Journal
A high-power continuous-wave polycrystalline 1% Nd:Y[sub 3]Al[sub 5]O[sub 12] (Nd:YAG) ceramic rod laser was demonstrated. With 290 W/808 nm laser diode pumping, cw laser output of 72 W was obtained at 1064 nm. The optical-to-optical conversion efficiency is 24.8%. Thermally induced birefringence properties of Nd:YAG ceramic was also investigated. © 2001 American Institute of Physics.


Related Articles

  • Guided-wave near-infrared detector in polycrystalline germanium on silicon. Colace, Lorenzo; Masini, Gianlorenzo; Assanto, Gaetano // Applied Physics Letters;11/14/2005, Vol. 87 Issue 20, p203507 

    Using a guided wave configuration, we demonstrate a novel polyGe-on-Si heterostructure photodetector realized on a silicon-on-insulator by a low deposition temperature process. Without further detector optimization, at 1.55 μm we measured wall-plug responsivities as high as 15 mA/W with an...

  • Growth kinetics of amorphous interlayers and formation of crystalline silicide phases in... Luo, C.H.; Chen, L.J. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3808 

    Investigates the growth kinetics of amorphous interlayer and formation of crystalline silicide phases in ultrahigh vacuum deposited polycrystalline Er and Tb films on Si. Growth of the amorphous interlayer in both Er/Si and Tb/Si systems; Measurement of energy of the linear growth and maximum...

  • Cd self-doping of CdTe polycrystalline films by co-sputtering of CdTe-Cd targets. Picos-Vega, A.; Becerril, M.; Zelaya-Angel, O.; Ramírez-Bon, R.; Espinoza-beltrán, F. J.; González-Hernández, J.; Jiménez-Sandoval, S.; Chao, B. // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p760 

    Studies the growth of Cd self-doping of CdTe polycrystalline films by co-sputtering of CdTe-Cd targets. Information in CdTe; Details on the experiment used in this study; Results of and discussion on the experiment.

  • 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm. Masini, Gianlorenzo; Colace, Lorenzo; Assanto, Gaetano // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2524 

    We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5...

  • Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si[sub 1-x]Ge[sub x](x=0,0.6)/HfO[sub 2] gate stack. Sung Kwan Kang; Suheun Nam; Byung Gi Min; Seok Woo Nam; Dae-Hong Ko; Mann-Ho Cho // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2004 

    The effect of interfacial reactions on the electrical properties of a polycrystalline (poly) Si[sub 1-x]Ge[sub x]/HfO[sub 2] gate stack were evaluated in terms of annealing conditions and the results were compared with those of a conventional poly-Si/HfO[sub 2] system. In the poly-Si[sub...

  • Interaction of TiSi2 layers with polycrystalline Si. Zheng, L. R.; Hung, L. S.; Feng, S. Q.; Revesz, P.; Mayer, J. W.; Miles, G. // Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p767 

    Interactions of silicide films with undoped polycrystalline layers of Si grown by chemical vapor deposition at 630 °C were investigated by MeV He ion backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. For TiSi2, heat treatment in vacuum at...

  • QUANTUM YIELD OF HETEROGENEOUS PHOTOCATALYTIC SYSTEMS: FURTHER APPLICATION OF AN EXPERIMENTAL METHOD FOR DETERMINING THE ABSORBED PHOTON FLOW. Schiavello, M.; Augugliaro, V.; Loddo, V.; Lopez-Munoz, M.J.; Palmisano, L. // Research on Chemical Intermediates;1999, Vol. 25 Issue 2, p213 

    Presents a study which reported additional results obtained with a method already proposed and used to measure absorbed and reflected photons during the occurrence of heterogeneous process carried out in the presence of a polycrystalline semiconductor solid suspended in aqueous solution. ...

  • Light Scattering by Molecular-Organized Films on the Surface of Polycrystalline Gold. Lysenko, S. I.; Snopok, B. A.; Sterligov, V. A.; Kostyukevich, E. V.; Shirshov, Yu. M. // Optics & Spectroscopy;Apr2001, Vol. 90 Issue 4, p606 

    Specific features of the structure of self-assembled layers of dodecanthiol on the surface of polycrystalline films of gold are investigated with the aim of revealing the effect of the substrate relief on the lateral distribution and the predominant orientation of thiol molecules within the...

  • Piezoresistive Effect in Polycrystalline Ferroelectric Semiconductors. Pavlov, A. N.; Raevskii, I. P. // Physics of the Solid State;Sep2002, Vol. 44 Issue 9, p1748 

    The influence of domain reorientations on the piezoresistivity of polycrystalline ferroelectric semiconductors under mechanical stresses is investigated. It is demonstrated that the inclusion of 90� domain reorientations in the analysis of the potential barriers formed at the grain...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics