TITLE

Electromigration threshold in copper interconnects

AUTHOR(S)
Wang, P.-C.; Filippi, R. G.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3598
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295-400 °C. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. 47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL)[sub th], at a certain temperature. The resulting (jL)[sub th] value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400 °C. © 2001 American Institute of Physics.
ACCESSION #
4710265

 

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