Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies

Radtke, C.; Baumvol, I. J. R.; Morais, J.; Stedile, F. C.
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3601
Academic Journal
Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiC[sub x]O[sub y]), while, for longer oxidation times, a mixture of SiC[sub x]O[sub y] and SiO[sub 2] is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC. © 2001 American Institute of Physics.


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