Structure, interface roughness, and growth mechanism of reactive deposition epitaxy of CoSi[sub 2] on Si(100) substrates

Sarkar, D. K.; Rau, I.; Falke, M.; Giesler, H.; Teichert, S.; Beddies, G.; Hinneberg, H.-J.
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3604
Academic Journal
Thin CoSi[sub 2] films have been grown on Si(100) substrates using the relative deposition epitaxy method. The structure of the silicide films have been analyzed using x-ray diffraction, transmission electron microscopy (TEM), and Rutherford backscattering spectrometry and channeling, and the interface roughness of the CoSi[sub 2]/Si(100) is analyzed using specular x-ray reflectivity and cross-sectional TEM. The structure and interface roughness of CoSi[sub 2]/Si(100) is found to be dependent on the substrate temperature. Highly epitaxial CoSi[sub 2] with minimum interface roughness is obtained when the film is grown at substrate temperatures around 900 K. The observed interface roughness is a parabolic function of temperature. The achievement of the best silicide at a substrate temperature around 900 K is explained on the basis of the instantaneous diffusion of Co through growing CoSi[sub 2]. © 2001 American Institute of Physics.


Related Articles

  • Dependence of damage and strain on the temperature of Si irradiation in epitaxial Ge0.10Si0.90 films on Si(100). Lie, D. Y. C.; Song, J. H.; Vantomme, A.; Eisen, F.; Nicolet, M.-A.; Theodore, N. D.; Carns, T. K.; Wang, K. L. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2329 

    Presents information on a study which measured the damage and strain produced in a strained epitaxial Ge[sub0.10]Si[0.90] thin film on Si(100) using MeV [sup4]He channeling spectrometry, transmission electron microscopy and high-resolution x-ray diffractometry. Experimental procedure; Results...

  • Observation of the early stages of growth of superconducting thin films by transmission electron microscopy. Norton, M. Grant; Tietz, Lisa A.; Summerfelt, Scott R.; Carter, C. Barry // Applied Physics Letters;11/27/1989, Vol. 55 Issue 22, p2348 

    A method for the direct observation of the early stages of growth of superconducting films by transmission electron microscopy (TEM) is reported. The technique uses well-characterized, single-crystal TEM foils as substrates for the deposition process. Ultrathin films of YBa2Cu3O6+x (YBCO) were...

  • GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant... Romanov, S.I.; Mashanov, V.I.; Sokolov, L.V.; Gutakovskii, A.; Pchelyakov, O.P. // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4118 

    Proposes to grow high-quality heteroepitaxial layers using compliant silicon substrate consisting of a thin epitaxial silicon film on a high-density porous layer as a membrane and an expansive low-density porous layer as a mechanical damper. Transmission electron microscopy analysis of GeSi...

  • Relation between critical current densities and epitaxy of YBa2Cu3O7 thin films on MgO(100) and SrTiO3(100). Kromann, R.; Bilde-So\rensen, J. B.; de Reus, R.; Andersen, N. H.; Vase, P.; Freltoft, T. // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3419 

    Provides information on a study that investigated the preferred orientation of YBa[sub2]Cu[sub3]O[sub7] thin films grown on single-crystal MgO(100) and SrTiO[sub3] (100) substrates using x-ray diffraction and transmission electron microscopy. Methodology of the study; Results of the study;...

  • Microstructure and homogeneity in (In,Mn)As III-V-based diluted magnetic semiconductor epitaxial films. Guha, S.; Munekata, H. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2974 

    Presents information on a study which determined the microstructural evaluation of thick (In,Mn)As epitaxial films grown by molecular-beam epitaxy on InAs/GaAs(100) substrates using transmission electron microscopy. Discussion of the microstructural defects in the films; Results and discussion;...

  • Aluminum nitride films on different orientations of sapphire and silicon. Dovidenko, K.; Oktyabrsky, S.; Narayan, J.; Razeghi, M. // Journal of Applied Physics;3/1/1996, Vol. 79 Issue 5, p2439 

    Provides information on a study that investigated epitaxial growth and microstructural characteristics of AlN films grown on sapphire and silicon substrates using plan-view and cross-sectional high-resolution transmission electron microscopy and x-ray diffraction techniques. Methodology of the...

  • (Pt/Co/Pt)/X multilayer films with high Kerr rotations and large perpendicular magnetic.... Bertero, G.A.; Sinclair, R. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3337 

    Examines the sputter-deposition of (platinum (Pt)/cobalt/Pt)/X multilayer films with Kerr rotations and perpendicular magnetic anisotropy energies. Dependence of magnetic coercivity on deposition parameters; Use of high resolution transmission electron microscopy; Growth of sputter-deposited...

  • Room-temperature epitaxial growth of CeO[sub 2](001) thin films on Si(001) substrates by electron beam evaporation. Ami, T.; Ishida, Y.; Nagasawa, N.; Machida, A.; Suzuki, M. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1361 

    Epitaxial growth of CeO[sub 2](001) thin films on Si(001) substrates was achieved by electron beam evaporation. Reflection high-energy electron diffraction and cross-sectional high-resolution transmission electron microscopy established the formation of an epitaxial CeO[sub 2](001)/Si(001)...

  • Elimination of microtwins in silicon grown on sapphire by molecular beam epitaxy. Twigg, M. E.; Richmond, E. D.; Pellegrino, J. G. // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1766 

    Using transmission electron microscopy, we have examined a number of (001) silicon thin films grown on (1012) sapphire substrates by molecular beam epitaxy (MBE). We have found that for silicon films less than 0.55 μm thick, microtwins are very much in evidence. For silicon films greater than...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics