TITLE

Simple chemical routes to diamond-cubic germanium-tin alloys

AUTHOR(S)
Taraci, Jennifer; Tolle, John; Kouvetakis, J.; McCartney, M. R.; Smith, David J.; Menendez, J.; Santana, M. A.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3607
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the development of a simple chemical route to growing Ge[sub 1-x]Sn[sub x] semiconductors using ultrahigh-vacuum chemical vapor deposition and the molecular precursor (Ph)SnD[sub 3] as the source of Sn atoms. Thin films were deposited on oxidized and oxide-free Si by reactions of (Ph)SnD[sub 3] with Ge[sub 2]H[sub 6] at 350 °C. The composition, microstructure, and bonding properties of the films were characterized by Rutherford backscattering, high-resolution analytical electron microscopy, and Raman spectroscopy. As-deposited Ge[sub 1-x]Sn[sub x] on oxidized Si displayed good crystallinity which improved significantly by annealing at 400 °C. High-resolution electron microscopy and diffraction indicated a diamond-cubic structure with lattice constants intermediate to those of Ge and α-Sn. As-deposited Ge[sub 1-x]Sn[sub x] on pure Si was monocrystalline and epitaxial. Nanoprobe analysis in plan view and cross section revealed that the as-deposited and annealed materials were homogeneous with good chemical purity. The Raman spectra showed bands corresponding to Ge-Ge and Sn-Ge vibrations with frequencies consistent with a random tetrahedral alloy. © 2001 American Institute of Physics.
ACCESSION #
4710262

 

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