TITLE

Nanocrystallization of amorphous-Ta[sub 40]Si[sub 14]N[sub 46] diffusion barrier thin films

AUTHOR(S)
Bicker, M.; Pinnow, C.-U.; Geyer, U.; Schneider, S.; Seibt, M.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3618
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The nanocrystallization process in thin amorphous-Ta[sub 40]Si[sub 14]N[sub 46] films, annealed in the range between 800 and 1000 °C for 1 h, is investigated by high-resolution transmission electron microscopy and high-angle annular dark-field and energy-dispersive x-ray analyses. At 800 °C clusters of about 2 nm in size indicate that compositional inhomogeneities have developed while the film has still remained structurally amorphous. The sample annealed at 900 °C contains a high density of nanograins of TaN measuring about 2 nm as well as amorphous structures measuring 75-100 nm having a high tantalum content. After annealing at 1000 °C, an almost entirely crystalline structure is observed with 4-nm-sized particles of cubic TaN and 15-nm-sized grains of Ta[sub 5]Si[sub 3]. Possible mechanisms driving these structural changes are discussed. © 2001 American Institute of Physics.
ACCESSION #
4710257

 

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