Conductance peak splitting in hole transport through a SiGe double quantum dot

Cain, Paul A.; Ahmed, Haroon; Williams, David A.
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3624
Academic Journal
We have observed the splitting of Coulomb oscillation peaks in coupled Si[sub 0.9]Ge[sub 0.1] double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated approach. A dot diameter of 50 nm or less increases the charging energy and, therefore, the operating temperature of the device compared to previous approaches. A simulation of the results using parameters calculated from the lithographic dimensions of the device shows that a good fit to the experimental data can be achieved with a realistic interdot capacitance value. © 2001 American Institute of Physics.


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