TITLE

Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

AUTHOR(S)
Goss, S. H.; Sun, X. L.; Young, A. P.; Brillson, L. J.; Look, D. C.; Molnar, R. J.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3630
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al[sub 2]O[sub 3] interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance-voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al[sub 2]O[sub 3] into GaN, over a range 100-1000 nm. © 2001 American Institute of Physics.
ACCESSION #
4710253

 

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