Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

Goss, S. H.; Sun, X. L.; Young, A. P.; Brillson, L. J.; Look, D. C.; Molnar, R. J.
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3630
Academic Journal
We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al[sub 2]O[sub 3] interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance-voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al[sub 2]O[sub 3] into GaN, over a range 100-1000 nm. © 2001 American Institute of Physics.


Related Articles

  • Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates. Kolesnikova, E.; Mynbaeva, M.; Sitnikova, A. // Semiconductors;Apr2007, Vol. 41 Issue 4, p387 

    Plain-view bright-field transmission electron microscopy and cathodoluminescence are used to study the defect structure of GaN films grown by hydride vapor-phase epitaxy on porous and nonporous SiC substrates. It is shown that the use of porous substrate reduces the mosaic structure of the...

  • Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films. Lee, Woong; Watanabe, Kentaro; Kumagai, Kazuhiro; Park, Seunghwan; Lee, Hyunjae; Yao, Takafumi; Chang, Jiho; Sekiguchi, Takashi // Journal of Electron Microscopy;Feb2012, Vol. 61 Issue 1, p25 

    The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature originated from pit-type defects. Two kinds of pit-type defects were distinguished by their morphology: one was...

  • Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Usikov, A. S.; Tret�yakov, V. V.; Lundin, V. V.; Zadiranov, Yu. M.; Pushnyi, B. V.; Konnikov, S. G. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p253 

    A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of ~ 1000�C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed...

  • Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence. Menniger, J.; Jahn, U.; Brandt, O.; Yang, H.; Ploog, K. // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p836 

    Spatially resolved cathodoluminescence (CL) spectroscopy in connection with scanning electron microscopy performed on cubic (c) GaN between 5 and 300 K reveals that at low temperatures the CL spectra of c-GaN single crystals consist of four well-separated lines. The two lines highest in energy...

  • Effects of excitation density on cathodoluminescence from GaN. Kucheyev, S. O.; Toth, M.; Phillips, M. R.; Williams, J. S.; Jagadish, C. // Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2154 

    Wurtzite GaN epilayers are studied by cathodoluminescence (CL) spectroscopy. Results show that the intensities of donor–acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, presumably, due to saturation effects. The intensity of near-gap...

  • Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence. Goldys, E. M.; Paskova, T.; Ivanov, I. G.; Arnaudov, B.; Monemar, B. // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    Hydride vapor phase epitaxial GaN films grown on sapphire without a buffer are found to contain large-scale regions with high electron concentration located close to the interface. These regions are composed of individual columns forming an irregular but quasicontinuous layer, while the rest of...

  • Cathodoluminescence studies of the electron injection-induced effects in GaN. Chernyak, Leonid; Burdett, William; Klimov, Mikhail; Osinsky, Andrei // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3680 

    Local irradiation of p-type GaN with the electron beam of a scanning electron microscope resulted in up to a threefold decrease of the peak cathodoluminescence intensity at ∼379 nm, as was observed in the variable temperature measurements. The cathodoluminescence results are consistent with...

  • Spectra and energy levels of Tb[sup 3+](4f [sup 8]) in GaN. Gruber, John B.; Zandi, Bahram; Lozykowski, H. J.; Jadwisienczak, W. M. // Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5127 

    The cathodoluminescence spectra of Tb[SUp3+] ions implanted and annealed in GaN epilayers have been analyzed and modeled according to its incorporation into a substitutional Ga lattice site having D[SUB2] point group symmetry. High-resolution emission spectra obtained at 11 K between 380 and 750...

  • Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by.... Nakadaira, Atsushi; Tanaka, Hidena // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p812 

    Examines the crystal growth of cubic gallium nitride (GaN) by metalorganic vapor-phase epitaxy. Observation of stimulated emission at 34 Kelvin; Measurement of the x-ray rocking curve of the cubic diffraction of the GaN layer; Maximum roughness of the line profile; Details on the threshold...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics