TITLE

Detection of two dangling bond centers with trigonal symmetry at and below a (100) Si/SiO[sub 2] interface

AUTHOR(S)
Langhanki, B.; Greulich-Weber, S.; Spaeth, J.-M.; Michel, J.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3633
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using electrical detection of electron paramagnetic resonance (EDEPR), two defect centers located at the Si (100)/SiO[sub 2] interface and in regions several μm below the silicon surface have been observed at a low temperature. Improvements in the EDEPR measurement technique enabled the experimental detection of the g-factor anisotropy of two centers, labeled P[sub ba] and P[sub bb]. Both appear with a [111]-oriented, trigonally symmetric g-tensor with g[sub ||]=2.0008/g[sub ⊥]=2.0098 and g[sub ||]=1.9974/g[sub ⊥]=2.0160, respectively (Δg=±0.0004). The data of the P[sub ba] center are very similar to those of the well known P[sub b0] center occurring on (100) oriented silicon. The location of the center which is significantly below the (100)Si/SiO[sub 2] interface is discussed. © 2001 American Institute of Physics.
ACCESSION #
4710252

 

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