TITLE

Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

AUTHOR(S)
Shiojima, Kenji; Suemitsu, Tetsuya; Ogura, Mitsumasa
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3636
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8x10[sup 17] cm[sup -3], showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility. © 2001 American Institute of Physics.
ACCESSION #
4710251

 

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