Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts

Shiojima, Kenji; Suemitsu, Tetsuya; Ogura, Mitsumasa
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3636
Academic Journal
We directly evaluated the effect of dislocations on current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky contacts. A submicrometer Schottky dot array was formed by electron beam lithography, and I-V measurements were conducted using atomic force microscopy with a conductive probe. The sample, which has a free electron concentration of 5.8x10[sup 17] cm[sup -3], showed that neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility. © 2001 American Institute of Physics.


Related Articles

  • Schottky barrier heights of metals contacting to p-ZnSe. Koide, Yasuo; Kawakami, T.; Teraguchi, N.; Tomomura, Y.; Suzuki, A.; Masanori Murakami // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2393 

    Focuses on the Schottky barrier heights of a variety of metals contacting to p-ZnSe. Internal photoemission method; Interference of the monochromatic incident light; Hysteresis of the C-V values; Turn-on voltages.

  • Photoelectric properties of GaSb Schottky diodes. Rotelli, B.; Tarricone, L.; Gombia, E.; Mosca, R.; Perotin, M. // Journal of Applied Physics;2/15/1997, Vol. 81 Issue 4, p1813 

    Electrical and photoelectrical properties of GaSb Schottky diodes obtained by evaporating gold metal dots on sulphur treated or chemically etched surfaces of Te-doped n-GaSb crystals (grown from melt by Czochralski method), with Hall carrier density in the range of 1.8-6.5 × 10[sup 17]...

  • Circuits galore. Bie, Alex // Popular Electronics;Jul98, Vol. 15 Issue 7, p13 

    Examines the Schottky diode, an important device widely used in radio-frequency applications. Similarity with point-contact diode; Advantages of diode made from metal semiconductor junction; Characteristics of Schottky; Variety of applications.

  • On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes. Chand, Subhash; Kumar, Jitendra // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p288 

    Studies the origin of the abnormal decrease of barrier height and increase of ideality factor with decrease in temperature and the nonlinearity of the activation energy plot in Pd2Si/Si Schottky diodes. Equations representing the current through a Schottky barrier at a forward bias V; Nature of...

  • Role of amphoteric defects in the formation of metal/GaAs Schottky barriers. Zhang, T.; Sigmon, T. W. // Applied Physics Letters;6/17/1991, Vol. 58 Issue 24, p2785 

    Studies the effect of near interface bulk defects on metal/GaAs Schottky barriers, calculated using a modified amphoteric native defect model. Trend in barrier heights for interfaces which undergo thermal processing for both n- and p-type substrates; Surface Fermi level positions for pulsed...

  • Controlling of Schottky barrier heights for Au/n-GaAs and Ti/n-GaAs with hydrogen introduced.... Jin, S.X.; Wang, H.P.; Yuan, M.H.; Song, H.Z.; Wang, H.; Mao, W.L.; Qin, G.G.; Ze-ying Ren; Bing-Chen Li; Xiong-Wei Hu; Guo-Sheng Sun // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2719 

    Examines the effect of introducing hydrogen into Schottky barriers of gold/n-gallium arsenide (GaAs) and titanium/n-GaAs. Display of zero/reverse bias annealing effect; Importance of selecting temperature for plasma hydrogen treatment; Location of the effective hydrogen.

  • Schottky characteristics of GaAs surface cleaned by ultrasonic running deionized water treatment. Hirota, Y. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1936 

    Investigates Schottky characteristics for GaAs (gallium arsenide) surface prepared by ultrasonic running deionized water treatment (URDIW) by measuring Schottky diodes. Details on the dependence of Schottky barrier height on work function; Ways to determine the Schottky barrier height; Effects...

  • 1.09-eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited on n- and.... Fricke, A.; Stareev, G. // Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p755 

    Examines the fabrication of platinum/gold Schottky contacts on aluminum indium arsenide lattice-matched to indium phosphide. Use of ion-cleaning and postdeposition annealing; Elimination of eventual postbombardment defects; Increase of the Schottky barrier height; Determination of initial...

  • Sharp variation in the magnetoresistance of a Si Schottky diode. Miller, D.J.; Lobb, J. // Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1391 

    Examines the variation of the magnetoresistance of a silicon Schottky diode. Investigation of the properties of semiconductors; Measurement of the voltage across the diode at constant current using lock-in detection; Dependence of a sharp feature in the resistance on the angle between the field...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics