"Inverted hut" structure of Si-Ge nanocrystals studied by extended x-ray absorption fine structure method

Soo, Y. L.; Kioseoglou, G.; Huang, S.; Kim, S.; Kao, Y. H.; Peng, Y. H.; Cheng, H. H.
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3684
Academic Journal
Local structure around Ge in Si/Ge superlattices containing the "inverted hut" nanocrystals has been investigated by using the extended x-ray absorption fine structure (EXAFS) technique. In contrast to the usual nanometer-sized Ge "hut clusters" commonly grown on top of Si layers using the conventional Stranski-Krastanow self-organized growth mode, SiGe-alloy nanocrystals can be formed beneath the Ge wetting layer and grown into the Si layer in Si/Ge superlattices prepared in a low-temperature molecular beam epitaxy growth mode, and exhibit inverted hut nanocrystal structures regularly spaced along the Si/Ge interface. The EXAFS results obtained with varying Ge wetting layer thickness provide a direct evidence that intermixing of Ge and Si atoms takes place in a zone of about 1-3 monolayers on each side of the Si/Ge interface. The intermixing of constituent atoms allows a mechanism other than the usual formation of misfit dislocations to release the strain energy resulted from lattice mismatch between Si and Ge at the interface. © 2001 American Institute of Physics.


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