Scanning-tunneling-microscope-assisted assembling of hydrogen-saturated silicon clusters on Si(111)-(7x7) surfaces

Bolotov, Leonid; Uchida, Noriyuki; Kanayama, Toshihiko
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3720
Academic Journal
Hydrogen-saturated silicon clusters of Si[sub 6]H[sub 12] and Si[sub 8]H[sub 18] deposited on Si(111)-(7x7) surfaces were intentionally assembled as islands 5-50 nm in diameter using scanning tunneling microscopy. Assembling occurs for both clusters when the tip-substrate bias voltage exceeds 3 V, irrespective of voltage polarity. Observed kinetics indicate that the mechanism is directional diffusion caused mainly by interaction between the electric field and the field-induced dipole moment of clusters. We demonstrate that the assembling process is applicable to the formation of artificial cluster nanostructures. © 2001 American Institute of Physics.


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