Thermal oxide of polycrystalline silicon on steel foil as a thin-film transistor gate dielectric

Wu, Ming; Wagner, Sigurd
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3729
Academic Journal
The gate dielectric of polycrystalline silicon thin-film transistors on steel foil substrates was grown by direct thermal oxidation. The silicon dioxide was formed on the polysilicon channel layer by dry oxidation for 40 min at 950 °C. Self-aligned sources and drains were ion implanted. The thin-film transistors have electron mobilities of ∼30 cm[sup 2]·V[sup -1] s[sup -1] in both the linear and saturated regimes, off currents of 35 pA/μm, and on/off current ratios of ∼ 10[sup 6]. The thin-film transistors function even though they are processed at 950 °C separated from steel by only 0.5 μm of SiO[sub 2], and at room temperature may be under compressive strain as high as 1%. The implementation of conventional high-temperature fabrication techniques makes polycrystalline silicon on steel foil a strong contender for flexible electronic backplanes. © 2001 American Institute of Physics.


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