Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO[sub 3] single crystals

Watanabe, Y.; Bednorz, J. G.; Bietsch, A.; Gerber, Ch.; Widmer, D.; Beck, A.; Wind, S. J.
June 2001
Applied Physics Letters;6/4/2001, Vol. 78 Issue 23, p3738
Academic Journal
Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO[sub 3] single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films. © 2001 American Institute of Physics.


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