TITLE

Surfactant mediated growth of MnSi[sub 1.7] on Si(001)

AUTHOR(S)
Teichert, S.; Hortenbach, H.; Hinneberg, H.-J.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p1988
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Sb is used as a surfactant for the growth of MnSi[sub 1.7] by reactive deposition of Mn on Si(001). It is found that the presence of Sb during the growth strongly increases the island density and changes the crystalline orientation of the MnSi[sub 1.7]. The morphology and structure of the resulting silicide are the same both for the deposition of Mn only on a Sb-terminated Si(001) surface and for the codeposition of Mn and Sb on Si(001). A residual Sb coverage close to one monolayer at the sample surface has been determined for both of the preparation conditions. © 2001 American Institute of Physics.
ACCESSION #
4710198

 

Related Articles

  • Microscopic study of the surfactant-assisted Si, Ge epitaxial growth. Cao, R.; Yang, X. // Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2347 

    Investigates the surfactant-assisted silicon (Si), germanium (Ge) epitaxial growth. Use of high resolution photoemission; Reduction of surface energy; Change in the position of antimony (Sb), Si, and Ge atoms; Segregation of the Sb atoms top the growth front.

  • Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on Si. Reinking, D.; Kammler, M. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p924 

    Investigates the level of antimony (Sb) segregation during surfactant-mediated epitaxy (SME). Impact of SME on germanium (Ge) film growth; Details on the electron Hall mobility and electron concentration of SME grown Ge films; Determination of low Sb incorporation by electrical characterization.

  • The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy. Zhang, L.; Tang, H. F.; Schieke, J.; Mavrikakis, M.; Kuech, T. F. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2304 

    The role and effect of the isoelectronic center Sb on the structure and properties of GaN epilayers have been investigated. The gas phase Sb concentration was varied by changing the triethyl antimony/trimethyl gallium mole ratio over a wide range of concentrations while keeping other growth...

  • Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical.... Osten, H.J.; Klatt, J. // Applied Physics Letters;5/18/1992, Vol. 60 Issue 20, p2522 

    Investigates the growth mode of germanium layers on silicon(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Mechanisms involved in the deposition of the surfactant; Use of the high-resolution electron microscopy and reflection high-energy electron diffraction;...

  • Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition. Bolkhovityanov, Yu.; Gutakovskii, A.; Deryabin, A.; Pchelyakov, O.; Sokolov, L. // Semiconductors;Jan2008, Vol. 42 Issue 1, p1 

    GeSi/Si heterostructures consisting of a plastically relaxed layer that includes various fractions of Ge and which is grown on Si (001) span the values of the lattice parameter from equal to that in silicon to equal to that in germanium. The corresponding substrates are conventionally referred...

  • Sb-surfactant-mediated growth of Si/Si[sub 1-y]C[sub y] superlattices by molecular-beam epitaxy. Pettersson, P.O.; Ahn, C.C. // Applied Physics Letters;10/23/1995, Vol. 67 Issue 17, p2530 

    Examines the antimony-surfactant-mediated growth of silicon (Si)/Si[sub 0.97]C[sub 0.03] superlattices. Use of reflection high energy electron diffraction and transmission electron microscopy; Composition and layer thickness of lattices; Role of carbon for the two-dimensional growth of...

  • The role of antimony on properties of widely varying GaInNAsSb compositions. Yuen, Homan B.; Bank, Seth R.; Hopil Bae; Wistey, Mark A.; Harris Jr., James S. // Journal of Applied Physics;5/1/2006, Vol. 99 Issue 9, p093504 

    Antimony has been used as a surfactant to improve the quality of GaInNAs/GaAs quantum wells for long-wavelength optoelectronics. We demonstrate the importance of antimony as a reactive surfactant and the proper usage of it with dilute nitrides in order to tailor the properties of solar cell and...

  • Nature of contrast in Ge/Si(111) layers in scanning tunneling microscopy in the presence of Bi and Sb surfactants. Zhachuk, R.; Olshanetsky, B.; Coutinho, J. // JETP Letters;May2012, Vol. 95 Issue 5, p259 

    It is known that the use of Bi surfactant (unlike Sb) upon the growth of Ge layers on Si(111) increases the contrast between Ge and Si atoms in a scanning tunneling microscope. This makes it possible to distinguish the Ge and Si surfaces. This effect is studied using computer simulation based on...

  • Surfactant role of (TM)Sb in MOVPE growth of metamorphic InGaAs graded buffers. Gocalinska, A.; Manganaro, M.; Pelucchi, E. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p17 

    We present a virtual substrate for high quality InAs epitaxial layer, obtained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of Trimethylantimony...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics