Improved extraction of the activation energy of the leakage current in silicon p-n junction diodes

Poyai, A.; Simoen, E.; Claeys, C.; Czerwinski, A.; Gaubas, E.
April 2001
Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p1997
Academic Journal
An accurate method is proposed for the extraction of the activation energy E[sub T] from the volume generation current density J[sub gA] in silicon p-n junctions. It combines temperature-dependent current-voltage (I-V) and capacitance-voltage measurements on an array of diodes with different geometry, in order to separate the peripheral from the volume components. The J[sub gA] can be found from the volume leakage current by subtraction of the volume diffusion current J[sub dA], which is calculated from the forward I-V characteristic. To derive the correct slope from an Arrhenius plot of the J[sub gA], several additional corrections have been applied. One is the temperature dependence of the depletion width, which is derived from the corrected volume capacitance. The most important E[sub T] change is shown to come from the temperature dependence of the recombination lifetime. © 2001 American Institute of Physics.


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