Conservation of flatband conditions for DySi[sub 2] monolayers on n-type Si(111)

Vandré, S.; Preinesberger, C.; Busse, W.; Da¨hne, M.
April 2001
Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p2012
Academic Journal
We propose a low-resistivity metal/Si/DySi[sub 2]/Si multilayer Ohmic contact to n-type Si. For a DySi[sub 2] monolayer on n-type Si(111), the Fermi level has been found to be located only 0.08 eV below the conduction-band minimum of Si, corresponding to flatband conditions. Here, we demonstrate that this Fermi-level position is conserved to a large extent upon Si overgrowth of the monolayer, allowing us to exploit the flatband conditions for device applications under ambient conditions. © 2001 American Institute of Physics.


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