TITLE

Epitaxial growth of Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] on Si and its nanoscale piezoelectric properties

AUTHOR(S)
Lin, A.; Hong, X.; Wood, V.; Verevkin, A. A.; Ahn, C. H.; McKee, R. A.; Walker, F. J.; Specht, E. D.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p2034
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have demonstrated a route to epitaxial Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO[sub 3] transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 Å, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ∼50 pm/V that is switchable down to sub-100-nm dimensions. © 2001 American Institute of Physics.
ACCESSION #
4710181

 

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