TITLE

Electrical properties of three-terminal ballistic junctions

AUTHOR(S)
Xu, H. Q.
PUB. DATE
April 2001
SOURCE
Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p2064
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Based on the ballistic nature of electron transport, exploitable nonlinear transport phenomena are predicted for three-terminal ballistic junctions (TBJs). For a symmetric TBJ, it is shown that when finite voltages V[sub l] and V[sub r] are applied in push-pull fashion, with V[sub l]=V and V[sub r]=-V, to the left and right branches, the voltage output V[sub c] from the central branch will always be negative. This characteristic appears even when the device symmetry is broken, provided that |V| is greater than a certain threshold. It is also shown that the TBJs exhibit parabolic behavior for V[sub c] vs V, in the weak nonlinear response regime. Potential applications of these devices in nanoelectronics are discussed. © 2001 American Institute of Physics.
ACCESSION #
4710169

 

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