Atomic scale protection using fullerene encapsulation

Cotier, B. N.; Upward, M. D.; Jones, F. H.; Moriarty, P.; Beton, P. H.
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p126
Academic Journal
The use of fullerene multilayers as a removable protective coating on a clean, reconstructed semiconductor surface has been investigated using an ultrahigh vacuum scanning tunneling microscope (UHV-STM). We have found that the Ag/Si(111)-&sqrt;3x&sqrt;3R30° surface, which is normally stable only under an UHV environment, can survive exposure to ambient conditions beneath a protective layer of C[sub 60]. The C[sub 60] capping layer may be removed by annealing after reinsertion into UHV. For optimum protection a thickness >5 monolayers is required. The protective effect lasts for times of order several minutes. © 2001 American Institute of Physics.


Related Articles

  • Surface science: View from the edge. Castner, David G. // Nature;3/13/2003, Vol. 422 Issue 6928, p129 

    Describes the use of gold and fullerene cluster-ion sources for characterizing surfaces. Challenges presented by the presence of bulk atoms in characterizing surfaces; Development of primary ion sources to produce a higher yield of secondary ions in secondary-ion mass spectrometry; Advantages...

  • Inversion criteria for the metal-insulator-semiconductor tunnel structures. Wang, S. J.; Fang, B. C.; Tzeng, F. C.; Chen, C. T.; Chang, C. Y. // Journal of Applied Physics;8/1/1986, Vol. 60 Issue 3, p1080 

    Focuses on a study which examined the conditions of strong surface inversion in the semiconductor surface of a metal-insulator-semiconductor tunnel structure. Theoretical background; Computation results and discussion; Critical oxide thickness; Conclusions.

  • Flat is beautiful for future chips. Kiernan, Vincent // New Scientist;9/21/96, Vol. 151 Issue 2048, p24 

    Focuses on the method devised by researchers at IBM and Cornell University to burn off the surface irregularities in silicon wafers, creating ultra-flat surfaces suitable for manufacturing semiconductors. Composition of the silicon wafer surfaces; Description of the levelling technique in...

  • Low energy positrons at semiconductor surfaces. Fazleev, N. G.; Fry, J. L.; Weiss, A. H. // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p753 

    Positron-annihilation-induced Auger spectra from the clean and exposed to hydrogen and oxygen Si(100)(2x1) surface are analyzed by performing calculations of positron states and annihilation characteristics. Positron surface and bulk states are calculated for different hydrogen and oxygen...

  • Treatment of organic polymer surfaces by CF[sub 4] plasmas: Etching by fluorine atoms and influence of vacuum ultraviolet radiation. Schwarzenbach, W.; Derouard, J.; Sadeghi, N. // Journal of Applied Physics;Dec2001, Vol. 90 Issue 11, p5491 

    Previous works have shown that atomic fluorine is the main etching agent of organic polymer surfaces subjected to fluorinated plasma treatments. In this work the etching probability per F atom impinging on a polymer-like material (hexatriacontane C[sub 36]H[sub 74], a model molecule for high...

  • Energy dependence of C60-graphite surface collisions. Pan, Z.Y.; Man, Z.Y.; Ho, Y.K.; Xie, J.; Yue, Y. // Journal of Applied Physics;5/1/1998, Vol. 83 Issue 9, p4963 

    Presents a study to investigate the resilience of C60 fullerene with graphite surfaces, utilizing molecular dynamics simulations with empirical model potentials. Details on methodology used to conduct study; Indication of findings; Discussion on results.

  • Recent developments in scanning tunneling spectroscopy of semiconductor surfaces. Feenstra, R.M.; Ramachandran, V.; Chen, H. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 8, pS193 

    Abstract. Several recent developments in scanning tunneling spectroscopy (STS) of semiconductor surfaces are reviewed. First, the normalization of spectra is discussed, which for the Si(111)2 x 1 surface is found to produce a small shift in the apparent position of band edges. With this...

  • Atomic structures of hydrogen-terminated Si(001) surfaces after wet cleaning by scanning tunneling microscopy. Endo, Katsuyoshi; Arima, Kenta; Kataoka, Toshihiko; Oshikane, Yasushi; Inoue, Haruyuki; Mori, Yuzo // Applied Physics Letters;9/28/1998, Vol. 73 Issue 13 

    Scanning tunneling microscopy observations are performed on a H-terminated Si(001) surface treated with HF solutions and ultrapure water with very low dissolved oxygen and total organic carbon contents. Over a large area, row structures are observed in [110] and [11¯0] directions....

  • Critical currents of sintered and melt-textured YBa2Cu3Ox. Alford, N. McN.; Birchall, J. D.; Clegg, W. J.; Kendall, K. // Journal of Applied Physics;4/1/1989, Vol. 65 Issue 7, p2856 

    Analyzes critical currents of sintered and melt-textured YBa[sub2]Cu[sub3]O[subx]. Information on the anisotropy effects; Method used to melt tecture the samples; Results of the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics