TITLE

Atomic scale protection using fullerene encapsulation

AUTHOR(S)
Cotier, B. N.; Upward, M. D.; Jones, F. H.; Moriarty, P.; Beton, P. H.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p126
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The use of fullerene multilayers as a removable protective coating on a clean, reconstructed semiconductor surface has been investigated using an ultrahigh vacuum scanning tunneling microscope (UHV-STM). We have found that the Ag/Si(111)-&sqrt;3x&sqrt;3R30° surface, which is normally stable only under an UHV environment, can survive exposure to ambient conditions beneath a protective layer of C[sub 60]. The C[sub 60] capping layer may be removed by annealing after reinsertion into UHV. For optimum protection a thickness >5 monolayers is required. The protective effect lasts for times of order several minutes. © 2001 American Institute of Physics.
ACCESSION #
4710151

 

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