TITLE

Quaternary Zn[sub x[sup ′]]Cd[sub y[sup ′]]Mg[sub 1-x[sup ′]-y[sup ′]]Se/Zn[sub x]Cd[sub y]Mg[sub 1-x-y]Se quantum wells grown on InP substrates for blue emission

AUTHOR(S)
Guo, S. P.; Zeng, L.; Tamargo, M. C.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Quaternary Zn[sub x[sup ′]]Cd[sub y[sup ′]]Mg[sub 1-x[sup ′]-y[sup ′]]Se/Zn[sub x]Cd[sub y]Mg[sub 1-x-y]Se quantum well (QW) structures in which both the well and the barrier layers are composed of quaternary alloys lattice matched to InP and having various well thicknesses have been grown and investigated. A blue emission with narrow linewidth was achieved by using a relatively thick well thickness (40-60 Å). The quaternary QW emission exhibits excitonic recombination behavior and it has higher quantum efficiency than the ternary Zn[sub x]Cd[sub 1-x]Se/Zn[sub x]Cd[sub y]Mg[sub 1-x-y]Se QW of comparable thickness. The temperature dependence of the photoluminescence measurements shows a high activation energy of 68 meV, indicating a strong quantum confinement by introduction of Mg in the QW region. © 2001 American Institute of Physics.
ACCESSION #
4710144

 

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