Radiative recombination and filling effect of surface states in porous InP

Liu, Aimin; Duan, Changkui
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p43
Academic Journal
Porous InP samples prepared by wet electrochemical anodization techniques are studied by photoluminescence (PL) spectroscopy at 25 K. The PL of as-grown porous InP shows redshift with respect to that of bulk InP. The PL emission is very sensitive to chemical and heat treatment. For instance, the PL obtained from the AgNO[sub 3] treated sample shows a blueshift with respect to that of the bulk InP. Moreover the PL spectra from the as-grown porous sample and the AgNO[sub 3] treated sample exhibit opposite shift trend on excitation levels. The PL of the AgNO[sub 3] treated sample shifts slightly to lower energies with increasing excitation levels, which is similar to that of the bulk InP, while the PL of the as-grown porous InP shifts obviously to higher energies, which is explained by the filling effect of surface states. © 2001 American Institute of Physics.


Related Articles

  • Comment on 'Nanoscale InP island embedded in InGaP' [Appl. Phys. Lett. 66, 361 (1995)]. Seifert, W.; Carlsson, N. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1166 

    Comments on the optical properties of strained indium phosphide (InP) films and InP islands. Assumption of the InP island luminescence; Attribution of InP deposition to the formation of noncoherent islands; Absence of saturation effects with increasing excitation power in InP structures.

  • Quaternary Zn[sub x[sup ′]]Cd[sub y[sup ′]]Mg[sub 1-x[sup ′]-y[sup ′]]Se/Zn[sub x]Cd[sub y]Mg[sub 1-x-y]Se quantum wells grown on InP substrates for blue emission. Guo, S. P.; Zeng, L.; Tamargo, M. C. // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p1 

    Quaternary Zn[sub x[sup ′]]Cd[sub y[sup ′]]Mg[sub 1-x[sup ′]-y[sup ′]]Se/Zn[sub x]Cd[sub y]Mg[sub 1-x-y]Se quantum well (QW) structures in which both the well and the barrier layers are composed of quaternary alloys lattice matched to InP and having various well...

  • Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique. Kang, Junyong; Matsumoto, Fumio // Journal of Applied Physics;1/15/1997, Vol. 81 Issue 2, p905 

    Investigates the photoluminescence spectra of undoped bulk indium phosphide crystals grown by the liquid-encapsulated vertical Bridgman technique. Attribution of peak exhibited near band-gap energy to the recombination of bound excitons; Recombination of deep levels characterized by a broadband...

  • In situ optical assessment of semi-insulating iron doped InP grown by liquid encapsulated... Dogan, S.; Tuzemen, S. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6777 

    Presents information on a study which demonstrated that infrared absorption technique provides quantitative measurements of iron doped indium phosphide concentrations. Experimental details; Results and discussion; Conclusions.

  • Structural and optical properties of vertically aligned InP quantum dots. Zundel, M.K.; Specht, P. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2972 

    Examines the influence of stacking of indium phosphide quantum dot layers on the photoluminescence energy, intensity and linewidth. Preparation of the layers by molecular beam epitaxy; Use of transmission electron microscopy; Effect of the reduction of dot layer distance on material homogeneity.

  • Optical properties of InGaAsP quantum well for infrared emission investigated by modulation spectroscopy. PIENKOS, TOMASZ; GLADYSZEWSKI, LONGIN; PROSZYNSKI, ADAM; CHOCYK, DARIUSZ; GLADYSZEWSKI, GRZEGORZ // Optica Applicata;2005, Vol. 35 Issue 3, p509 

    Modulation spectroscopy, i.e., photoreflectance (PR) and contactless electroreflectance (CER) are very powerful techniques to investigate optical properties of nanostructures. These techniques together with photoluminescence spectroscopy were used for investigation of optical properties of...

  • Channel optical waveguides formed by deuterium passivation in GaAs and InP. Kumar, Mukesh; Boyd, Joseph T.; Jackson, Howard E.; Zavada, John M.; Jenkinson, Howard A.; Wilson, Robert G.; Theys, B.; Chevallier, J. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3205 

    Describes the formation of channel optical waveguides on both gallium arsenide and indium phosphide substrates utilizing deuterium passivation of the surface. Establishment of design criteria for obtaining single mode channel waveguides; Demonstration of planar and channel waveguide operations;...

  • Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots. Hayne, M.; Maes, J.; Moshchalkov, V. V.; Manz, Y. M.; Schmidt, O. G.; Eberl, K. // Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p45 

    We have studied the magnetophotoluminescence of doubly stacked layers of self-assembled InP quantum dots in a GaInP matrix. 4.0±0.1 monolayers of InP were deposited in the lower layer of each sample, whereas in the upper layer 3.9, 3.4, and 3.0 monolayers were used. Low-temperature...

  • Magnetic and optical properties of ytterbium-doped indium phosphide crystals. Bagraev, N. T.; Romanov, V. V.; Savel'ev, V. P. // Physics of the Solid State;Feb2006, Vol. 48 Issue 2, p236 

    The intimate relation connecting the magnetic and optical properties of ytterbium-doped indium phosphide is studied under the conditions of local magnetic ordering and compensation of spin correlations by electron-vibration interaction. An analysis of the temperature dependences of the static...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics