Epitaxial growth of orientation-controlled KNbO[sub 3] crystal films on MgO using KTa[sub x]Nb[sub 1-x]O[sub 3] intermediate layer by metalorganic chemical vapor deposition

Onoe, Atsushi; Yoshida, Ayako; Chikuma, Kiyofumi
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p49
Academic Journal
In this letter, we report a method to obtain an orientation-controlled (010) KNbO[sub 3] crystal film on (110) MgO substrate based on the epitaxial growth by the low-pressure metalorganic chemical vapor deposition. In order to control the orientation of the KNbO[sub 3] film, an intermediate layer of KTa[sub x]Nb[sub 1-x]O[sub 3] was used. In the case where the Ta/(Ta+Nb) ratio of the KTa[sub x]Nb[sub 1-x]O[sub 3] film was over 40%, we could obtain (010)-oriented epitaxial KNbO[sub 3] films. Furthermore, the surface morphology of the deposited film, the thickness of which was about 1 μm, was smooth at the Ta/(Ta+Nb) ratio of 60%. The measurement of the refractive index dispersion of the KNbO[sub 3] crystal film was also carried out. © 2001 American Institute of Physics.


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