Zinc oxide doping effects in polarization switching of lithium niobate

Peng, L.-H.; Zhang, Y.-C.; Lin, Y.-C.
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p4
Academic Journal
We report a pulsed-field analysis on the 180° domain reversal process in Z-cut congruent grown lithium niobate (LiNbO[sub 3]) doped with zinc oxide at concentration C[sub ZnO]>5 mol %. The polarization switching field is found to decrease with the ZnO doping with a threshold (E[sub th]) and internal (E[sub int]) field as low as 2.5 and 0.5 kV/mm, respectively, resultant on 8 mol % ZnO doped LiNbO[sub 3]. The substantial decrease of E[sub th] and E[sub int] is ascribed to the suppression of nonstoichiometric point defects by the substitution of Zn[sup 2+] ions in the lattice site. © 2001 American Institute of Physics.


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