Growth and optical properties of In[sub x]Al[sub y]Ga[sub 1-x-y]N quaternary alloys

Li, J.; Nam, K. B.; Kim, K. H.; Lin, J. Y.; Jiang, H. X.
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p61
Academic Journal
In[sub x]Al[sub y]Ga[sub 1-x]N quaternary alloys with different In and Al compositions were grown by metalorganic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. It was observed that the dominant optical transition at low temperatures in In[sub x]Al[sub y]Ga[sub 1-x]N quaternary alloys was due to localized exciton recombination, while the localization effects in In[sub x]Al[sub y]Ga[sub 1-x]N quaternary alloys were combined from those of InGaN and AlGaN ternary alloys with comparable In and Al compositions. Our studies have revealed that In[sub x]Al[sub y]Ga[sub 1-x]N quaternary alloys with lattice matched with GaN epilayers (yapprox. 4.8x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensity (or quantum efficiency) in In[sub x]Al[sub y]Ga[sub 1-x-y]N quaternary alloys than that of GaN. The quantum efficiency of In[sub x]Al[sub y]Ga[sub 1-x]N quaternary alloys was also enhanced significantly over AlGaN alloys with a comparable Al content. These results strongly suggested that In[sub x]Al[sub y]Ga[sub 1-x-y]N quaternary alloys open an avenue for the fabrication of many optoelectronic devices such as high efficient light emitters and detectors, particularly in the ultraviolet region. © 2001 American Institute of Physics.


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