Accelerated and reproducible oxidation of strain-compensated short-period superlattice structures for incorporation in InP based devices

Koley, B.; King, O.; Johnson, F. G.; Saini, S. S.; Dagenais, M.
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p64
Academic Journal
An accelerated oxidation process has been demonstrated in InAs/AlAs-based strain-compensated ultrashort-period superlattices grown on an InP substrate. It has been observed that the uniformity as well as the rate of the oxidation process in the strain-compensated short-period superlattice depends on the composition of the surrounding semiconductor layers. A suitable layer structure has been designed to obtain accelerated and reproducible oxidation rate in InP based optoelectronic devices. © 2001 American Institute of Physics.


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