TITLE

Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate

AUTHOR(S)
Sugaya, Takeyoshi; Ogura, Mutsuo; Sugiyama, Yoshinobu; Matsumoto, Kazuyuki; Yonei, Kenji; Sekiguchi, Takashi
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p76
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaAs quantum wires (QWRs) with cross sections as narrow as 10 nmx20 nm have been fabricated on a (311)A InP V-grooved substrate under an As[sub 2] source. Trench-type InGaAs QWRs consist of (111)A and (331)B facets with an angle of about 22°. Cathode-luminescence and photoluminescence measurements confirmed the luminescence peak arising from the QWRs. © 2001 American Institute of Physics.
ACCESSION #
4710122

 

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