Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate

Sugaya, Takeyoshi; Ogura, Mutsuo; Sugiyama, Yoshinobu; Matsumoto, Kazuyuki; Yonei, Kenji; Sekiguchi, Takashi
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p76
Academic Journal
InGaAs quantum wires (QWRs) with cross sections as narrow as 10 nmx20 nm have been fabricated on a (311)A InP V-grooved substrate under an As[sub 2] source. Trench-type InGaAs QWRs consist of (111)A and (331)B facets with an angle of about 22°. Cathode-luminescence and photoluminescence measurements confirmed the luminescence peak arising from the QWRs. © 2001 American Institute of Physics.


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