Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

McKay, H. A.; Feenstra, R. M.; Schmidtling, T.; Pohl, U. W.
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p82
Academic Journal
The pair distribution function of nitrogen atoms in GaAs[sub 0.983]N[sub 0.017] has been determined by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the cleaved (11¯0) surface are imaged. A modest enhancement in the number of nearest-neighbor pairs particularly with [001] orientation is found, although at larger separations the distribution of N pair separations is found to be random. © 2001 American Institute of Physics.


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