Fabrication and lateral electronic transport measurements of gold nanowires

Ramsperger, U.; Uchihashi, T.; Nejoh, H.
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p85
Academic Journal
A technique for fabrication of gold nanowires on a Si(111) surface in ultrahigh vacuum and their electronic transport properties are presented. Gold wires with widths as small as 4 nm are produced by using a gold-coated piezoresistive cantilever in atomic force microscope contact mode. This technique allows patterns to be written at will. In situ electronic transport measurements of a gold wire as long as 7 μm and 4 nm wide show unambiguous metallic behavior. This fabrication method could become pivotal within the next generation of nanoscale microprocessors. © 2001 American Institute of Physics.


Related Articles

  • Growth and study of self-organized Ge quantum wires on Si(111) substrate. Jin, G.; Tang, Y.S.; Liu, J.L.; Wang, K.L. // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2471 

    Reports that self-organized Ge quantum wires were grown on regular atomic steps formed on Si(111) substrates by annealing in vacuum. Examination of the samples by atomic force microscopy, polarization-dependent Raman scattering and low temperature photoluminescence spectroscopy.

  • Area selective deposition of gold on silicon surface patterned by tip-induced anodization in.... Sugimura, Hiroyuki; Nakagiri, Nobuyuki // Applied Physics Letters;3/13/1995, Vol. 66 Issue 11, p1430 

    Investigates the area selective deposition of gold on silicon surface patterned by tip-induced anodization. Fabrication of gold nanostructures; Prevention of gold deposition by the anodic oxide surface; Creation of gold lines less than 200 nm in width.

  • STM study of room temperature adsorption of Au on the Si(111)(7x7) surface: evidence for the reaction of Au atoms with Si rest atoms. Chizhov, I.; Lee, G.; Willis, R.F. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS1003 

    Abstract. The initial stages of Au adsorption at sub-monolayer coverages on the Si(111)-(7x7) surface at room temperature have been studied by scanning tunneling microscopy (STM). At very low Au coverages (THETA is similar to 0.01 monolayers)STM images show that some of the triangular sub-unit...

  • Scanning tunnelling spectroscopy of dangling-bond wires fabricated on the Si(100)-2x1-H surface. Hashizume, T.; Heike, S.; Wada, Y.; Watanabe, S.; Hasegawa, T.; Kitazawa, K. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS695 

    Abstract. The scanning tunnelling microscopy/spectroscopy (STM/STS) of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2x1-H surface is studied. A single DB and a paired DB on a Si dimer, fabricated by extracting hydrogen atoms from the hydrogen-terminated Si surface, are...

  • Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface. Qiu, X.; Shang, G.; Wang, C.; Bai, C. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS91 

    Abstract. This paper examines the feasibility of locally modifying the interface properties of the gold/silicon system using ballistic electron emission microscopy (BEEM). Distinctly different fabricated features have been observed in BEEM images of the Au/Si interface depending on the polarity...

  • Creation of nanostructures on gold surfaces in nonconducting liquid. Chang, T.C.; Chang, C.S. // Applied Physics Letters;8/14/1995, Vol. 67 Issue 7, p903 

    Focuses on the creation of nanostructures on gold surfaces in nonconducting liquid. Similarity of the created mound to those produced in air; Use of tungsten and PtIr tips in the experiment; Dominant shape of created structures; Creation of the nanometer structures by a mechanical contact...

  • The IMEC clean: A new concept for particle and metal removal on Si surfaces. Meuris, M.; Mertens, Pp.W. // Solid State Technology;Jul95, Vol. 38 Issue 7, p109 

    Describes the IMEC clean concept for particle and metal removal on silicon surfaces for use in the microelectronic industry. Removal of oxidation and oxide; Particle and metal removal efficiencies; Minimizing surface roughening; Electrical breakdown measurements.

  • Self-organization during Si1-yCy alloy layer growth on Si(001) using homogeneous coevaporation. Osten, H.J.; Bugiel, E. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p231 

    Shows that the formation of self-organized psuedosuperlattices during homogeneous epitaxial growth of Si1-yCy on Si(001) is a fundamental phenomenon not limited to special growth techniques. Periodicity as a monotonic function of the growth conditions; Different amount of carbons contained in...

  • Stabilization of the photoluminescence from porous silicon: The competition between... Dudel, Frank P.; Gole, James L. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p402 

    Demonstrates the means to stabilize the photoluminescence from an electrochemically etched (100) silicon surface. Stabilizing influence of water on a nonaqueous etching process; Stabilizing effect of hydrochloric acid on porous silicon surface.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics