TITLE

Fabrication and lateral electronic transport measurements of gold nanowires

AUTHOR(S)
Ramsperger, U.; Uchihashi, T.; Nejoh, H.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p85
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A technique for fabrication of gold nanowires on a Si(111) surface in ultrahigh vacuum and their electronic transport properties are presented. Gold wires with widths as small as 4 nm are produced by using a gold-coated piezoresistive cantilever in atomic force microscope contact mode. This technique allows patterns to be written at will. In situ electronic transport measurements of a gold wire as long as 7 μm and 4 nm wide show unambiguous metallic behavior. This fabrication method could become pivotal within the next generation of nanoscale microprocessors. © 2001 American Institute of Physics.
ACCESSION #
4710118

 

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