TITLE

Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers

AUTHOR(S)
Li, Wei; Turpeinen, Jani; Melanen, Petri; Savolainen, Pekka; Uusimaa, Petteri; Pessa, Markus
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p91
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas-source molecular beam epitaxy using a rf-plasma nitrogen radical beam source. Effects of rapid thermal annealing on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes were examined. It was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, mainly due to a removal of N-induced nonradiative centers from GaInNAs wells. © 2001 American Institute of Physics.
ACCESSION #
4710116

 

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