TITLE

SiC/SiO[sub 2] interface states observed by x-ray photoelectron spectroscopy measurements under bias

AUTHOR(S)
Sakurai, Takeaki; de Vasconcelos, Elder A.; Katsube, Teruaki; Nishioka, Yasushiro; Kobayashi, Hikaru
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p96
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Energy distribution of interface states at an ultrathin SiO[sub 2]/SiC interface is obtained by means of x-ray photoelectron spectroscopy (XPS) under bias. The substrate Si 2p peak shows a reversible energy shift by the application of a bias voltage to SiC with respect to the Pt layer of the 〈Pt/SiO[sub 2]/6H-SiC(0001)〉 structure, and the analysis of the shift clarifies that an interface state peak is present near the midgap. The analysis of the current-voltage curves shows that in the entire bias region, the interface states communicate with conduction and/or valence bands under x-ray irradiation, and consequently, despite the wide-gap semiconductor, interface states in the whole band-gap region are observable by this method. © 2001 American Institute of Physics.
ACCESSION #
4710114

 

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