Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications

Kaul, Anupama B.; Whiteley, Stephen R.; Van Duzer, Theodore; Yu, Lei; Newman, Nathan; Rowell, John M.
January 2001
Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p99
Academic Journal
We report on the growth, fabrication, and device characterization of NbN internally shunted Josephson junctions with a TaNx barrier. The resistivity of TaNx films could be varied from a few hundred micro-ohms to a few hundred milliohms by increasing the N[sub 2] pressure during reactive sputtering. The temperature dependence of I[sub c]R[sub n] of the junctions with ∼13 mΩ cm barrier resistivity was measured for various barrier thicknesses. The coherence length of the barrier was determined to be 5 nm. By adjusting the barrier thickness, I[sub c]R[sub n] values >500 μV were observed up to 8.3 K, with I[sub c] and R[sub n] of magnitudes that are suitable for single-flux-quantum digital circuits. © 2001 American Institute of Physics.


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