Large reduction of leakage current by graded-layer La doping in (Ba[sub 0.5], Sr[sub 0.5])TiO[sub 3] thin films

Saha, S.; Krupanidhi, S. B.
July 2001
Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p111
Academic Journal
A large reduction in the leakage current behavior in (Ba, Sr)TiO[sub 3] (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole-Frenkel conduction mechanism. © 2001 American Institute of Physics.


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