Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process

Kim, T. W.; Choo, D. C.; Shim, J. H.; Jung, M.; Kang, S. O.; Lee, H. S.; Lee, J. Y.
July 2001
Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p120
Academic Journal
A Ga[sup +] focused ion-beam (FIB) technique utilizing both lithographic and nanoparticle formation processes has been introduced to create nanocrystals acting as Coulomb islands at room temperature. High-resolution transmission electron microscopy results show that the nanocrystals acting as Coulomb islands are created in the source-drain active layer by using a Ga[sup +] FIB. The results for the drain current and the conductance as functions of the drain voltage with an open gate voltage at room temperature show a Coulomb staircase and conductance oscillations, respectively. Nanoscale particles of Al with an amorphous phase are created in the source-drain channel by the defects due to the radiation effect of the Ga[sup +] FIB, and collisions between Ga[sup +] ions and Al atoms produce secondary electrons, that interact with the nanoparticles, which are acting as Coulomb islands, to form the crystal phase. © 2001 American Institute of Physics.


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