TITLE

Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes

AUTHOR(S)
Weman, H.; Dupertuis, M.-A.; Martinet, E.; Rudra, A.; Kapon, E.
PUB. DATE
July 2001
SOURCE
Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p4
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of ∼20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field points out the typical superlinear behavior of the excitonic binding energy for a quantum wire. © 2001 American Institute of Physics.
ACCESSION #
4710056

 

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